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Symmetrical Al2O3-based passivation layers for p- and n-type silicon
Type:
Conference Proceedings
Info:
Solar Energy Materials and Solar Cells, Volume 131, December 2014, Pages 72-76, SI: SiliconPV 2014
Date:
2014-06-02
Author Information
| Name | Institution |
|---|---|
| Daniel Kai Simon | NaMLab gGmbH |
Films
Plasma SiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
Notes
| PEALD SiO2 and thermal ALD Al2O3 and HfO2 for PV passivation application. |
| 290 |