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Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
Type:
Journal
Info:
phys. stat. sol. (a) 202, No. 14, R164–R166 (2005)
Date:
2005-10-20
Author Information
| Name | Institution |
|---|---|
| Yong Tae Kim | Korea Institute of Science and Technology |
| Ji Ho Park | Korea Institute of Science and Technology |
Films
Plasma WN
Film/Plasma Properties
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: -
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Barrier Characteristics
Analysis: TEM, Transmission Electron Microscope
Substrates
| SiO2 |
Notes
| SiO2 surface pretreated with N2/H2 plasma prior to film deposition. |
| 54 |