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Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
J. Vac. Sci. Technol. A 32(4), Jul/Aug 2014
Date:
2014-04-28
Author Information
| Name | Institution |
|---|---|
| Halit Altuntas | Cankiri Karatekin University |
| İnci Dönmez | Bilkent University |
| Çağla Özgit | Bilkent University |
| Necmi Biyikli | Bilkent University |
Films
Plasma Ga2O3
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Anneal
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Threshold Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Substrates
| Si(111) |
Notes
| Substrates solvent cleaned. |
| 128 |