AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD

Type:
Conference Proceedings
Info:
224th ECS Meeting, Oct 2013, San Francisco, United States. pp.269-27.
Date:
2014-08-05

Author Information

Name Institution
Richard MeunierCEA - LETI MINATEC

Films



Film/Plasma Properties

Substrates

Notes

206