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Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
Type:
Journal
Info:
JOURNAL OF APPLIED PHYSICS 117, 155101 (2015)
Date:
2015-04-02
Author Information
| Name | Institution |
|---|---|
| Halit Altuntas | Cankiri Karatekin University |
| Çağla Özgit | Bilkent University |
| İnci Dönmez | Bilkent University |
| Necmi Biyikli | Bilkent University |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Current Density
Analysis: I-V, Current-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Threshold Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Unknown
Analysis: XRR, X-Ray Reflectivity
Substrates
| Si(100) |
Notes
| 315 |