Publication Information

Title: Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

Type: Journal

Info: J. Vac. Sci. Technol. A 33(1), Jan/Feb 2015

Date: 2014-11-21

DOI: http://dx.doi.org/10.1116/1.4903365

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature = 200C

75-24-1

7732-18-5

Deposition Temperature = 200C

1445-79-0

7664-41-7

Deposition Temperature = 200C

1445-79-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Unknown

Keithley 4200-SCS

Contact Resistance

Unknown

Keithley 4200-SCS

Thickness

Ellipsometry

Unknown

Transistor Characteristics

Unknown

Unknown

Mobility

Unknown

Unknown

Images

SEM, Scanning Electron Microscopy

Unknown

Substrates

GaN

Al2O3

Keywords

GaN

TFT, Thin Film Transistor

Photodetectors

Notes

Hollow-cathode plasma source.

Ultratech Fiji PEALD GaN study with various annealing and photodetector results.

169

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