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Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
Type:
Thesis
Info:
Niskanen Thesis
Date:
2006-11-10
DOI:
No DOI
Author Information
| Name | Institution |
|---|---|
| Antti Niskanen | University of Helsinki |
| Antti Rahtu | University of Helsinki |
| Timo Sajavaara | University of Helsinki |
| Kai Arstila | University of Helsinki |
| Mikko K. Ritala | University of Helsinki |
| Markku A. Leskelä | University of Helsinki |
Films
Plasma Cu
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Adhesion
Analysis: Tape Test
Substrates
| Glass |
| Silicon |
| SiLK |
| Cu |
| TaN |
| TiN |
Notes
| Some of the Si samples were HF etched. |
| Compares impurities with and without point-of-use gas purifiers |
| Used Sairem SURF451 surfatron plasma source. |
| Plasma source limitations require it to be kept on during the entire run with slow power ramping between high and low powers. |
| Portion of the reactor was replaced by polycarbonate to be compatible with the plasma source. |
| 82 |