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PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
Type:
Journal
Info:
Journal of The Electrochemical Society, 151(12) C753-C756 (2004)
Date:
2004-10-28
Author Information
| Name | Institution |
|---|---|
| Oh-Kyum Kwon | Korea Advanced Institute of Science and Technology |
| Se-Hun Kwon | Korea Advanced Institute of Science and Technology |
| Hyoung-Sang Park | Genitech Co., Ltd. |
| Sang-Won Kang | Korea Advanced Institute of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Adhesion
Analysis: Tape Test
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| TiN |
Notes
| Ru(EtCp)2 vapor pressure is 180mTorr at 80C. |
| Interesting combination of O2 thermal and H2 plasma experiment shows importance of adsorbed O on Ru growth during processing. |
| 106 |