Publication Information

Title: Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage

Type: Thesis

Info: Niskanen Thesis

Date: 2006-11-10

DOI: No DOI

Author Information

Name

Institution

University of Helsinki

University of Helsinki

University of Helsinki

University of Helsinki

Films

Deposition Temperature Range N/A

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

Bruker-Axs D8 Advance diffractometer/reflectometer

Thickness

XRR, X-Ray Reflectivity

Bruker-Axs D8 Advance diffractometer/reflectometer

Density

XRR, X-Ray Reflectivity

Bruker-Axs D8 Advance diffractometer/reflectometer

Morphology, Roughness, Topography

XRR, X-Ray Reflectivity

Bruker-Axs D8 Advance diffractometer/reflectometer

Thickness

Spectrophotometry

Hitachi U-2000 Spectrophotometer

Film Detection,Penetration

SEM, Scanning Electron Microscopy

Zeiss DSM-962

Film Detection,Penetration

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Link ISIS Spectrometer

Leakage Current

I-V, Current-Voltage Measurements

Keithley 2400 Source Meter

Breakdown Voltage

I-V, Current-Voltage Measurements

Keithley 2400 Source Meter

Capacitance

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

FTIR, Fourier Transform InfraRed spectroscopy

Perkin Elmer Spectrum GX

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Perkin Elmer Spectrum GX

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Perkin Elmer Spectrum GX

Refractive Index

Spectrophotometry

Hitachi U-2000 Spectrophotometer

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Substrates

Glass

Silicon

ITO

Pt

Polyethylene

Paper

Wool

Keywords

Al2O3

Notes

Reference 190 - TMA decomposes at 375C.

Plasma source limitations require it to be kept on during the entire run with slow power ramping between high and low powers.

Portion of the reactor was replaced by polycarbonate to be compatible with the plasma source.

Used Sairem SURF451 surfatron plasma source.

84

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