Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method

Type:
Journal
Info:
JOURNAL OF APPLIED PHYSICS, VOLUME 92, NUMBER 9, 1 NOVEMBER 2002
Date:
2002-11-01

Author Information

Name Institution
Yangdo KimHanyang University
Jaehyoung KooHanyang University
Jiwoong HanHanyang University
Sungwoo ChoiHanyang University
Hyeongtag JeonHanyang University
Chan Gyung ParkHanyang University

Films

Thermal ZrO2


Plasma ZrO2


Thermal ZrO2


Plasma ZrO2


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)
SiOxNy

Notes

Si(100) substrates received pirahna and HF cleans
SiOxNy substrates only received pirahna clean.
ZrO2 films received 800C RTA for 10s in N2.
55