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Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
Type:
Journal
Info:
J. Vac. Sci. Technol. A 20(3), May/Jun 2002
Date:
2002-02-15
Author Information
| Name | Institution |
|---|---|
| Hyungjun Kim | IBM |
| S. M. Rossnagel | IBM |
Films
Film/Plasma Properties
Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: QCM, Quartz Crystal Microbalance
Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Substrates
| Pt |
| Cu |
| Al |
| Silicon |
| Amorphous C |
Notes
| Nice reaction kinetics discussion. |
| H2 plasma can etch Si or amorphous C. |
| 88 |