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The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
Type:
Conference Proceedings
Info:
ECS Transactions, 33 (2) 61-67 (2010)
Date:
2010-07-08
Author Information
| Name | Institution |
|---|---|
| H. B. Profijt | Eindhoven University of Technology |
| P. Kudlacek | Eindhoven University of Technology |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma Al2O3
Plasma Al2O3
Film/Plasma Properties
Characteristic: Ion Energy
Analysis: RFEA, Retarding Field Energy Analyzer
Characteristic: Ion Flux
Analysis: RFEA, Retarding Field Energy Analyzer
Characteristic: Ion Flux
Analysis: Custom
Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe
Characteristic: Electron Density, ne
Analysis: Langmuir Probe
Characteristic: Gas Phase Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Gas Phase Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance
Substrates
| Silicon |
Notes
| 718 |