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Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
Type:
Journal
Info:
Journal of Crystal Growth 322 (2011) 33 - 37
Date:
2011-03-01
Author Information
| Name | Institution |
|---|---|
| Dai-Hong Kim | Seoul National University |
| Ji-Hwan Kwon | Seoul National University |
| Miyoung Kim | Seoul National University |
| Seong-Hyeon Hong | Seoul National University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: X-ray Pole Figure
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Substrates
| Sapphire |
Notes
| 696 |