Publication Information

Title: Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

Type: Journal

Info: Nature Communications, v. 7 (2016)

Date: 2016-01-06

DOI: http://dx.doi.org/10.1038/ncomms10632

Author Information

Name

Institution

University of Alberta

University of Alberta

University of Alberta

University of Alberta

University of Alberta

Films

Deposition Temperature = 130C

557-20-0

7732-18-5

Deposition Temperature = 100C

19962-11-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000DI

Transistor Characteristics

Transistor Characterization

Unknown

Substrates

Silicon

ZnO

Keywords

Notes

764

Disclaimer

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