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Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 29, 021016 (2011)
Date:
2011-01-24
Author Information
| Name | Institution |
|---|---|
| Noémi Leick | Eindhoven University of Technology |
| R. O. F. Verkuijlen | Eindhoven University of Technology |
| Luca Lamagna | National Research Council (CNR - Italy) |
| E. Langereis | Eindhoven University of Technology |
| S. Rushworth | SAFC Hitech |
| Fred Roozeboom | Eindhoven University of Technology |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Thermal Ru
Plasma Ru
Plasma TiN
Film/Plasma Properties
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Precursor Vapor Pressure
Analysis: -
Characteristic: Evaporation Characteristics
Analysis: TGA, Thermo Gravimetric Analysis
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Nucleation
Analysis: TEM, Transmission Electron Microscope
Substrates
| Si with native oxide |
| TiN |
| TEM Grid |
Notes
| Nice plot comparing vapor pressure of eight different Ru precursors. |
| 680 |