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Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
Type:
Conference Proceedings
Info:
IEICE Tech. Rep., vol. 115, no. 329, ED2015-81, pp. 69-72, Nov. 2015.
Date:
2015-11-25
Author Information
| Name | Institution |
|---|---|
| P. Pungboon Pansila | Yamagata University |
| Kensaku Kanomata | Yamagata University |
| Bashir Ahmmad | Yamagata University |
| Shigeru Kubota | Yamagata University |
| Fumihiko Hirose | Yamagata University |
Films
Film/Plasma Properties
Characteristic: Surface Reactions
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy
Characteristic: Surface Reactions
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Si(100) |
Notes
| TMG adsorption at room temperature and NH3 plasma at 115C. |
| 539 |