Publication Information

Title: Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source

Type: Conference Proceedings

Info: IEICE Tech. Rep., vol. 115, no. 329, ED2015-81, pp. 69-72, Nov. 2015.

Date: 2015-11-25

DOI: http://www.ieice.org/ken/paper/20151127VbEe/eng/

Author Information

Name

Institution

Yamagata University

Yamagata University

Yamagata University

Yamagata University

Yamagata University

Films

Plasma GaN using Unknown

Deposition Temperature Range = 25-115C

1445-79-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Surface Reactions

IRAS, Infrared Reflection Absorption Spectroscopy

Unknown

Surface Reactions

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

Si(100)

Keywords

Notes

TMG adsorption at room temperature and NH3 plasma at 115C.

539

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