Publication Information

Title: Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions

Type: Journal

Info: Journal of Vacuum Science & Technology A 34, 01A122 (2016)

Date: 2015-11-05

DOI: http://dx.doi.org/10.1116/1.4935960

Author Information

Name

Institution

University of Notre Dame

University of Notre Dame

University of Notre Dame

University of Notre Dame

University of Notre Dame

Films

Deposition Temperature Range N/A

27804-64-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

TEM, Transmission Electron Microscope

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Substrates

Ni

Keywords

Notes

412

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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