Publication Information

Title: Perspectives on future directions in III-N semiconductor research

Type: Journal

Info: J. Vac. Sci. Technol. A 31(5), Sep/Oct 2013

Date: 2013-07-16

DOI: http://dx.doi.org/10.1116/1.4813687

Author Information

Name

Institution

U.S. Naval Research Laboratory

American Association for Engineering Education

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

Films

Deposition Temperature Range N/A

75-24-1

7727-37-9

Deposition Temperature Range N/A

1445-79-0

7727-37-9

Deposition Temperature Range N/A

3385-78-2

7727-37-9

Deposition Temperature Range N/A

75-24-1

3385-78-2

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam alpha-SE

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Mobility

Four Point Probe Hall Effect

Unknown

Carrier Concentration

Four Point Probe Hall Effect

Unknown

Reflectance Spectra

Reflection Spectroscopy

Yokogawa AQ6375

Substrates

Sapphire

Si(111)

GaN

Keywords

III-Nitride

Notes

All substrates solvent cleaned and DI rinsed.

Si(111) HF cleaned.

GaN HF + HCl cleaned.

143

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