Publication Information

Title: Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack

Type: Journal

Info: IEEE Transactions on Electron Devices, Volume:62, Issue:12, 2015

Date: 2015-10-26

DOI: http://dx.doi.org/10.1109/TED.2015.2489224

Author Information

Name

Institution

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

University of California - Berkeley

National Chiao Tung University

National Chiao Tung University

Films

Plasma AlN using Unknown

Deposition Temperature = 250C

75-24-1

7664-41-7

Thermal HfO2 using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Sopra GES-5E

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Capacitance

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Leakage Current

I-V, Current-Voltage Measurements

HP 4284A LCR

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Microlab 350

Substrates

InGaAs

Keywords

Notes

Document text and references 1 and 3 suggest the AlN is a plasma film.

516

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