Publication Information

Title: Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3

Type: Journal

Info: Applied Surface Science 357, Part B (2015) 1920 - 1927

Date: 2015-09-15

DOI: http://dx.doi.org/10.1016/j.apsusc.2015.09.138

Author Information

Name

Institution

Yamagata University

Yamagata University

Yamagata University

Yamagata University

Yamagata University

Yamagata University

Films

Plasma GaN using Unknown

Deposition Temperature = 115C

1445-79-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Surface Reactions

ATR-FTIR

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Thickness

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

GaN

Keywords

Notes

474

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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