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Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
Type:
Journal
Info:
ECS Transactions, 58 (10) 223-233 (2013)
Date:
2013-10-18
Author Information
| Name | Institution |
|---|---|
| Julien Ferrand | STMicroelectronics |
| Virginie Beugin | STMicroelectronics |
| Alexandre Crisci | Grenoble-CNRS-Université Joseph Fourier |
| Stéphane Coindeau | Grenoble-CNRS-Université Joseph Fourier |
| Simon Jeannot | STMicroelectronics |
| Mickaël Gros-Jean | STMicroelectronics |
| Elisabeth Blanquet | Grenoble-CNRS-Université Joseph Fourier |
Films
Plasma ZrO2
Plasma TaZrO2
Plasma GeZrO2
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: EPMA, Electron Probe Micro Analyzer
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
| TiN |
Notes
| 624 |