Publication Information

Title: Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

Type: Journal

Info: J. Vac. Sci. Technol. A 34(1), Jan/Feb 2016

Date: 2015-11-10

DOI: http://dx.doi.org/10.1116/1.4936230

Author Information

Name

Institution

Marmara University

Marmara University

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature Range = 200-450C

1115-99-7

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Park Systems, XE-100

Thickness

Ellipsometry

J.A. Woollam VASE

Refractive Index

Ellipsometry

J.A. Woollam VASE

Extinction Coefficient

Ellipsometry

J.A. Woollam VASE

Transmittance

UV-VIS Spectroscopy

Unknown

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Bruker Vertex 70

Substrates

Si(100)

Quartz

Keywords

Notes

979

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