Publication Information

Title: Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors

Type: Journal

Info: IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 5, PP. 496-498, 2015

Date: 2015-03-16

DOI: http://dx.doi.org/10.1109/LED.2015.2412685

Author Information

Name

Institution

Oregon State University

Oregon State University

Oregon State University

Oregon State University

Oregon State University

Films

Plasma Al2O3 using Picosun R200

Deposition Temperature = 200C

75-24-1

7782-44-7

Plasma SiO2 using Picosun R200

Deposition Temperature = 200C

27804-64-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

FEI Technai F20

Thickness

Ellipsometry

J.A. Woollam M-2000

Capacitance

C-V, Capacitance-Voltage Measurements

Agilent E4980A Precision LCR Meter

Leakage Current

I-V, Current-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Substrates

TaN

Al2O3

Keywords

Capacitors

Notes

514

Disclaimer

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