Publication Information

Title: Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

Type: Journal

Info: Optical Engineering 53(10), 107106 (October 2014)

Date: 2014-09-11

DOI: http://dx.doi.org/10.1117/1.OE.53.10.107106

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature = 200C

1445-79-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam VASE

Electrical Properties

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Photocurrent

Custom

Custom

Substrates

SiO2

Keywords

Photodetectors

Notes

Ultratech Fiji PEALD GaN for UV MSM photodetector.

Meaglow plasma source used.

302

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