Publication Information

Title: Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

Type: Journal

Info: Thin Solid Films 589 (2015) 47 - 51

Date: 2015-04-23

DOI: http://dx.doi.org/10.1016/j.tsf.2015.04.068

Author Information

Name

Institution

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

Films

Deposition Temperature Range = 240-300C

75-24-1

3385-78-2

7727-37-9

Deposition Temperature Range = 240-300C

3385-78-2

1445-79-0

7727-37-9

Deposition Temperature Range = 350-450C

75-24-1

1445-79-0

7727-37-9

Deposition Temperature = 400C

1445-79-0

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku

Optical Properties

Optical Reflectivity

Ocean Optics S2000

Thickness

Ellipsometry

J.A. Woollam VASE

Resistivity, Sheet Resistance

Two-point Probe

Unknown

Substrates

Si(111)

Sapphire

GaN

Keywords

Notes

350

Disclaimer

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