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Publication Information

Title: Silicon surface passivation with atomic layer deposited aluminum nitride

Type: Conference Proceedings

Info: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

Date: 2016-06-05

DOI: http://dx.doi.org/10.1109/PVSC.2016.7750205

Author Information

Name

Institution

Aalto University

Aalto University

Aalto University

Aalto University

Aalto University

Films

Plasma AlN using Beneq TFS-500

Deposition Temperature Range = 200-300C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Substrates

Silicon

Keywords

Passivation

Notes

968

Disclaimer

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