Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 27, 761-766 (2009)
Date:
2009-03-23

Author Information

Name Institution
Pieter RowletteColorado School of Mines
Cary G. AllenColorado School of Mines
Olivia B. BromleyColorado School of Mines
Colin A. WoldenColorado School of Mines

Films

Plasma ZnO


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements

Substrates

Silicon

Notes

757