Publication Information

Title: Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping

Type: Journal

Info: ACS Appl. Mater. Interfaces, 2015, 7 (31), pp 17032-17043

Date: 2015-07-21

DOI: http://dx.doi.org/10.1021/acsami.5b03071

Author Information

Name

Institution

Bulgarian Academy of Sciences

Fraunhofer Institute for Integrated Systems and Device Technology (IISB)

Friedrich-Alexander University Erlangen-Nuremberg

Bulgarian Academy of Sciences

Fraunhofer Institute for Integrated Systems and Device Technology (IISB)

Films

Plasma HfO2 using Unknown

Deposition Temperature = 300C

19962-11-9

7782-44-7

Plasma HfAlOx using Unknown

Deposition Temperature = 300C

19962-11-9

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Plasmos SD 2000

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Agilent 4156C

Fixed Charge

C-V, Capacitance-Voltage Measurements

Agilent 4156C

Leakage Current

I-V, Current-Voltage Measurements

HP 4145A Semiconductor Parameter Analyzer

Leakage Current

Temperature Dependent I-V, Current-Voltage Measurements

HP 4145A Semiconductor Parameter Analyzer

Substrates

SiOxNy

Keywords

Notes

408

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

Follow plasma-ald.com

Follow @PlasmaALDGuy Tweet

Shortcuts



© 2014-2017 plasma-ald.com