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Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2015, 7 (31), pp 17032-17043
Date:
2015-07-21
Author Information
| Name | Institution |
|---|---|
| Albena Paskaleva | Bulgarian Academy of Sciences |
| Mathias Rommel | Fraunhofer Institute for Integrated Systems and Device Technology (IISB) |
| Andreas Hutzler | Friedrich-Alexander University Erlangen-Nuremberg |
| Dencho Spassov | Bulgarian Academy of Sciences |
| Anton J. Bauer | Fraunhofer Institute for Integrated Systems and Device Technology (IISB) |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Leakage Current
Analysis: Temperature Dependent I-V, Current-Voltage Measurements
Substrates
| SiOxNy |
Notes
| 408 |