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Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
Type:
Journal
Info:
J. Phys. Chem. C, 2015, 119 (21), pp 11786-11791
Date:
2015-05-08
Author Information
| Name | Institution |
|---|---|
| Ranjith K. Ramachandran | Ghent University |
| Jolien Dendooven | Ghent University |
| Hilde Poelman | Ghent University |
| Christophe Detavernier | Ghent University |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Optical Properties
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Transmittance
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Thickness
Analysis: XRF, X-Ray Fluorescence
Characteristic: Conformality, Step Coverage
Analysis: XRF, X-Ray Fluorescence
Substrates
| SiO2 |
Notes
| 352 |