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Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
Type:
Conference Proceedings
Info:
22th Symposium on Nano Device Technology (SNDT)
Date:
2015-09-10
Author Information
| Name | Institution |
|---|---|
| Meng-Chen Tsai | National Taiwan University |
| Jhih-Jie Huang | National Taiwan University |
| Yi-Jen Tsai | National Taiwan University |
| Min-Hung Lee | National Taiwan Normal University |
| Miin-Jang Chen | National Taiwan University |
Films
Plasma ZrO2
Plasma Al2O3
Plasma ZrON
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
CAS#: 175923-04-3
CAS#: 7782-44-7
CAS#: 7727-37-9
Plasma AlON
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
Notes
| 365 |