Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes

Type:
Journal
Info:
Journal of Vacuum Science & Technology B 32, 03D123 (2014)
Date:
2014-04-15

Author Information

Name Institution
Patrick D. LomenzoUniversity of Florida
Peng ZhaoUniversity of Florida
Qanit TakmeelUniversity of Florida
Saeed MoghaddamUniversity of Florida
Toshikazu NishidaUniversity of Florida
Matthew NelsonNorth Carolina State University
Chris M. FancherNorth Carolina State University
Everett D. GrimleyNorth Carolina State University
Xiahan SangNorth Carolina State University
James M. LeBeauNorth Carolina State University
Jacob L. JonesNorth Carolina State University

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: Sawyer-Tower circuit

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Substrates

Si(100)

Notes

677