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Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 4, PP. 513-516, 2017
Date:
2017-03-01
Author Information
| Name | Institution |
|---|---|
| Ke Zeng | University at Buffalo |
| Joshua S. Wallace | University at Buffalo |
| Christopher Heimburger | University at Buffalo |
| K. Sasaki | Novel Crystal Technology, Inc. |
| A. Kuramata | Novel Crystal Technology, Inc. |
| Takekazu Masui | Novel Crystal Technology, Inc. |
| Joseph A. Gardella | University at Buffalo |
| Uttam Singisetti | University at Buffalo |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: -
Substrates
| Ga2O3 |
Notes
| 1081 |