Publication Information

Title: Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures

Type: Conference Proceedings

Info: 2016 China Semiconductor Technology International Conference (CSTIC)

Date: 2016-03-14

DOI: http://dx.doi.org/10.1109/CSTIC.2016.7464089

Author Information

Name

Institution

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

Films

Plasma AlN using Unknown

Deposition Temperature Range N/A

Thermal HfO2 using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Passivation

Notes

826

Disclaimer

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