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PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
Type:
Journal
Info:
Semiconductors, 2017, Vol. 51, No. 1, pp 131-133.
Date:
2016-06-08
Author Information
| Name | Institution |
|---|---|
| Anil G. Khairnar | North Maharashtra University |
| V.S. Patil | North Maharashtra University |
| K.S. Agrawal | North Maharashtra University |
| R. S. Salunke | North Maharashtra University |
| A.M. Mahajan | North Maharashtra University |
Films
Plasma ZrO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Interfacial Layer
Analysis: -
Substrates
| 6H-SiC |
Notes
| 998 |