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In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
Type:
Journal
Info:
Applied Surface Science 387 (2016) 274 - 279
Date:
2016-06-13
Author Information
| Name | Institution |
|---|---|
| Meng-Chen Tsai | National Taiwan University |
| Min-Hung Lee | National Taiwan Normal University |
| Chin-Lung Kuo | National Taiwan University |
| Hsin-Chih Lin | National Taiwan University |
| Miin-Jang Chen | National Taiwan University |
Films
Plasma ZrO2
Plasma ZrON
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
CAS#: 19756-04-8
CAS#: 7782-44-7
CAS#: 7664-41-7
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Substrates
| Si(100) |
| ZrO2 |
| ZrON |
Notes
| 865 |