Publication Information

Title: Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

Type: Journal

Info: Applied Physics Letters 104, 243505 (2014)

Date: 2014-06-04

DOI: http://dx.doi.org/10.1063/1.4884061

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature Range N/A

1445-79-0

7727-37-9

1333-74-0

Deposition Temperature Range N/A

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Images

SEM, Scanning Electron Microscopy

Unknown

Transistor Characteristics

Unknown

Keithley 4200-SCS

Substrates

Silicon

Keywords

Notes

Substrates RCA cleaned followed by HF-dip prior to deposition.

Meaglow Ltd hollow cathode RF-plasma source was used.

139

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

Follow plasma-ald.com

Follow @PlasmaALDGuy Tweet

Shortcuts



© 2014-2017 plasma-ald.com