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Publication Information

Title: Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks

Type: Journal

Info: Applied Physics Letters 108, 242905 (2016)

Date: 2016-05-31

DOI: http://dx.doi.org/10.1063/1.4953787

Author Information

Name

Institution

Moscow Institute of Physics and Technology

Moscow Institute of Physics and Technology

Moscow Institute of Physics and Technology

Moscow Institute of Physics and Technology

Technological Institute for Superhard and Novel Carbon Materials

Moscow Institute of Physics and Technology

Films

Plasma TiN using Unknown

Deposition Temperature = 330C

7550-45-0

7664-41-7

Plasma HfLaOx using Unknown

Deposition Temperature = 235C

352535-01-4

68959-87-5

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Ferroelectricity

Unknown

Unknown

Electrical Properties

Unknown

Unknown

Substrates

SiO2

TiN

HfLaOx

Keywords

Ferroelectrics

FRAM, Ferroelectric Random Access Memory

Notes

864

Disclaimer

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