The publication database currently has 1700 entries.
Use Advanced Search for more complex searches
Innatiux is a retained executive recruiting firm with a focus on the search and placement of proven leaders for client companies in the field of high-tech capital equipment and analytical instrumentation. We are seeking WW technical and business leaders with a background in semiconductor deposition to fill confidential senior and executive level positions with our clients. Visit us at: www.innatiux.com
Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
Type:
Journal
Info:
Applied Physics Letters 106, 102107 (2015)
Date:
2015-03-06
Author Information
| Name | Institution |
|---|---|
| Ye Jia | University at Buffalo |
| Ke Zeng | University at Buffalo |
| Robert M. Wallace | University at Buffalo |
| Joseph A. Gardella | University at Buffalo |
| Uttam Singisetti | University at Buffalo |
Films
Plasma SiO2
Film/Plasma Properties
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Conduction Band Offset
Analysis: I-V, Current-Voltage Measurements
Substrates
| Ga2O3 |
| Silicon |
Notes
| Combined electrical and XPS data to establish band alignment between Ga2O3 substrate and Oxford Instruments FlexAL PEALD SiO2. |
| 344 |