Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks

Type:
Journal
Info:
Nanoscale Research Letters (2015) 10:137
Date:
2015-02-04

Author Information

Name Institution
Yuren XiangChinese Academy of Sciences
Chunlan ZhouChinese Academy of Sciences
Endong JiaChinese Academy of Sciences
Wenjing WangChinese Academy of Sciences

Films

Thermal Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Interface Trap Density
Analysis: Non-contact Corona C-V

Characteristic: Lifetime
Analysis: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Silicon

Notes

Comparison of thermal and plasma enhanced ALD of Al2O3 for passivation of silicon solar cell.
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