Publication Information

Title: Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

Type: Journal

Info: Nanoscale Research Letters (2015) 10:135

Date: 2015-03-02

DOI: http://dx.doi.org/10.1186/s11671-015-0846-y

Author Information

Name

Institution

Nanjing University

Nanjing University

Nanjing University

Nanjing University

Nanjing University

Nanjing University

Nanjing University

Films

Plasma TiN using Picosun R200

Deposition Temperature = 400C

7550-45-0

7664-41-7

Thermal HfO2 using Picosun R200

Deposition Temperature = 250C

352535-01-4

7732-18-5

Thermal Al2O3 using Picosun R200

Deposition Temperature = 250C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interfacial Layer

TEM, Transmission Electron Microscope

FEI Tecnai G2 F20 S-Twin

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Thickness

Ellipsometry

Sopra GES-5E

Substrates

TiN

Keywords

Resistance RAM

Notes

Picosun SUNALE R200 PEALD TiN with thermal Al2O3 and HfO2 for resistive RAM study.

334

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