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Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
Type:
Journal
Info:
Nanoscale Research Letters (2015) 10:135
Date:
2015-03-02
Author Information
| Name | Institution |
|---|---|
| Lai-Guo Wang | Nanjing University |
| Xu Qian | Nanjing University |
| Yanqiang Cao | Nanjing University |
| Zheng-Yi Cao | Nanjing University |
| Guo-Yong Fang | Nanjing University |
| Aidong Li | Nanjing University |
| Di Wu | Nanjing University |
Films
Plasma TiN
Thermal HfO2
Thermal Al2O3
Film/Plasma Properties
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
| TiN |
Notes
| Picosun SUNALE R200 PEALD TiN with thermal Al2O3 and HfO2 for resistive RAM study. |
| 334 |