Publication Information

Title: Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films

Type: Journal

Info: J. Vac. Sci. Technol. A 23(3), May/Jun 2005

Date: 2005-05-01

DOI: http://dx.doi.org/10.1116/1.1894666

Author Information

Name

Institution

University of California - Los Angeles (UCLA)

University of California - Los Angeles (UCLA)

University of California - Los Angeles (UCLA)

Films

Plasma HfO2 using Custom

Deposition Temperature Range N/A

2172-02-3

7782-44-7

Plasma ZrO2 using Custom

Deposition Temperature Range N/A

2081-12-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Electron Temperature, Te

Langmuir Probe

Custom

OES

OES, Optical Emission Spectroscopy

Ocean Optics MC2000

Thickness

Ellipsometry

Unknown

Refractive Index

Spectrophotometry

SCI FilmTek 1500 Spectrophotometer

Bonding States

XPS, X-ray Photoelectron Spectroscopy

VG ESCALAB 5

Thickness

XPS, X-ray Photoelectron Spectroscopy

VG ESCALAB 5

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

VG ESCALAB 5

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Thermo Nicolet Nexus 640

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

FTIR, Fourier Transform InfraRed spectroscopy

Thermo Nicolet Nexus 640

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Digital Instruments MM AFM-2

Thermal Stability

Anneal

Blue M SW-11TA

Capacitance

C-V, Capacitance-Voltage Measurements

HP 4284B LCR

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

HP 4284B LCR

Hysteresis

C-V, Capacitance-Voltage Measurements

HP 4284B LCR

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

HP 4284B LCR

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

HP 4284B LCR

Leakage Current

I-V, Current-Voltage Measurements

HP 4156B Semiconductor Parameter Analyzer

Substrates

Silicon

Keywords

High-k Dielectric Thin Films

Notes

Silicon samples DI rinsed and HF cleaned.

Deposition temperature not mentioned. Cold wall reactor. Perhaps related to high ZrO2 GPC.

Results compared to PECVD results from their earlier publication.

Some samples annealed at 250C in air.

63

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