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Publication Information

Title: Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration

Type: Conference Proceedings

Info: 2010 IEEE International 3D Systems Integration Conference (3DIC)

Date: 2010-11-16

DOI: http://dx.doi.org/10.1109/3DIC.2010.5751434

Author Information

Name

Institution

RTI International

RTI International

RTI International

RTI International

Films

Plasma TiN using Unknown

Deposition Temperature = 250C

3275-24-9

7727-37-9

Thermal TiN using Unknown

Deposition Temperature = 400C

7550-45-0

7664-41-7

Thermal Ru using Unknown

Deposition Temperature Range = 270-350C

32992-96-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

Unknown

Unknown

Resistivity, Sheet Resistance

Unknown

Unknown

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

Unknown

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Unknown

Substrates

SiO2

Keywords

Plasma vs Thermal Comparison

Notes

731

Disclaimer

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