Publication Information

Title: Self-Limiting Growth of GaN at Low Temperatures

Type: Journal

Info: Acta Physica Polonica A 120, no. 6A (2011).

Date: 2011-09-19

DOI: http://yadda.icm.edu.pl/yadda/element/bwmeta1.element.bwnjournal-article-appv120n6ap16kz

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature Range = 100-500C

1445-79-0

7664-41-7

Deposition Temperature Range = 100-400C

1115-99-7

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Thickness

Ellipsometry

J.A. Woollam VASE

Substrates

Si(100)

Si(111)

Keywords

Notes

Substrates HF dipped followed by DI rinse and N2 drying.

Ultratech Fiji PEALD GaN film development.

160

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