Publication Information

Title: Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process

Type: Journal

Info: J. Mater. Chem. C, 2014,2, 5805-5811

Date: 2014-05-12

DOI: http://dx.doi.org/10.1039/C4TC00648H

Author Information

Name

Institution

Yonsei University

Films

Thermal B2O3 using Unknown

Deposition Temperature Range N/A

121-43-7

10028-15-6

Plasma B2O3 using Unknown

Deposition Temperature Range N/A

121-43-7

7782-44-7

Thermal SiO2 using Unknown

Deposition Temperature Range N/A

27804-64-4

10028-15-6

Plasma SiO2 using Unknown

Deposition Temperature Range N/A

27804-64-4

7782-44-7

Thermal B:SiO2 using Unknown

Deposition Temperature Range N/A

27804-64-4

121-43-7

10028-15-6

Plasma B:SiO2 using Unknown

Deposition Temperature Range N/A

27804-64-4

121-43-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Extinction Coefficient

Unknown

Unknown

Flat Band Voltage

Unknown

Unknown

Leakage Current

Unknown

Unknown

Compositional Depth Profiling

SIMS, Secondary Ion Mass Spectrometry

Unknown

Substrates

Keywords

PEALD Film Development

Doping

Notes

241

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