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Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
Type:
Journal
Info:
Appl. Phys. Lett. 103, 082110 (2013)
Date:
2013-08-20
Author Information
| Name | Institution |
|---|---|
| Neeraj Nepal | U.S. Naval Research Laboratory |
| Syed B. Qadri | U.S. Naval Research Laboratory |
| Jennifer K. Hite | U.S. Naval Research Laboratory |
| Nadeemullah A. Mahadik | U.S. Naval Research Laboratory |
| Michael A. Mastro | U.S. Naval Research Laboratory |
| Charles R. Eddy, Jr. | U.S. Naval Research Laboratory |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Band Gap
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Two-point Probe
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Substrates
| Si(111) |
| Sapphire |
| GaN |
Notes
| All substrates solvent cleaned and DI rinsed. |
| Si(111) HF cleaned. |
| GaN HF + pirahna cleaned. |
| In situ sample prep included TMG + H2 plasma to simulate Ga-flash-off process followed by H2 plasma and N2 plasma. |
| 95 |