The publication database currently has 1700 entries.
Use Advanced Search for more complex searches
Innatiux is a retained executive recruiting firm with a focus on the search and placement of proven leaders for client companies in the field of high-tech capital equipment and analytical instrumentation. We are seeking WW technical and business leaders with a background in semiconductor deposition to fill confidential senior and executive level positions with our clients. Visit us at: www.innatiux.com
Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
J. Nanosci. Nanotechnol. 2011, Vol. 11, No. 1, p.671-674.
Date:
2011-01-01
Author Information
| Name | Institution |
|---|---|
| Seong-Jun Jeong | Korea Advanced Institute of Science and Technology |
| Doo-In Kim | Pusan National University |
| Sang Ouk Kim | Korea Advanced Institute of Science and Technology |
| Jung-Dae Kwon | Korea Institute of Materials Science |
| Jin-Seong Park | Dankook University |
| Se-Hun Kwon | Pusan National University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Barrier Characteristics
Analysis: Four-point Probe
Characteristic: Barrier Characteristics
Analysis: XRD, X-Ray Diffraction
Substrates
| SiO2 |
Notes
| Ru deposition used N2/H2 plasma while TiN deposition used only N2 plasma. |
| 119 |