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Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 3, PP. 235-237, 2015
Date:
2015-01-07
Author Information
| Name | Institution |
|---|---|
| A. Malmros | Chalmers University of Technology |
| P. Gamarra | III-V Lab |
| M.-A. Di Forte-Poisson | III-V Lab |
| Jaan Aarik | Chalmers University of Technology |
| C. Lacam | III-V Lab |
| Jaan Aarik | Chalmers University of Technology |
| M. Tordjman | III-V Lab |
| R. Aubry | III-V Lab |
| N. Rorsman | Chalmers University of Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: -
Characteristic: Refractive Index
Analysis: -
Substrates
Notes
| 468 |