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A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
Type:
Journal
Info:
Microelectronic Engineering 147 (2015) 277-280
Date:
2015-04-10
Author Information
| Name | Institution |
|---|---|
| S. J. Cho | University of Glasgow |
| Joseph W. Roberts | University of Liverpool |
| I. Guiney | University of Cambridge |
| X. Li | University of Glasgow |
| G. Ternent | University of Glasgow |
| K. Floros | University of Glasgow |
| C. J. Humphreys | University of Cambridge |
| Paul R. Chalker | University of Liverpool |
| I. G. Thayne | University of Glasgow |
Films
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Frequency Dispersion
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface State Density
Analysis: I-V, Current-Voltage Measurements
Substrates
Notes
| Ar plasma treatment of GaN surface prior to thermal Al2O3 results in improved MOSCAP properties. |
| 313 |