Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 31, 01A142 (2013)
Date:
2012-11-28

Author Information

Name Institution
Yumi KawamuraNara Institute of Science and Technology
Nozomu HattoriMitsui Engineering & Shipbuilding Co., Ltd.
Naomasa MiyatakeMitsui Engineering & Shipbuilding Co., Ltd.
Yukiharu UraokaNara Institute of Science and Technology

Films

Plasma ZnO


Plasma ZnO


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

SiO2

Notes

635