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Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 66, No. 12, pp. 1885-1888
Date:
2015-05-27
Author Information
| Name | Institution |
|---|---|
| Jae-Sung Choi | Hanyang University |
| Jea-Gun Park | Hanyang University |
Films
Other HfO2
Other Al2O3
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Frequency Dispersion
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: Conductance-Voltage Measurements
Substrates
| InGaAs |
Notes
| InGaAs substrate exposed to NH3 plasma before thermal ALD HfO2/Al2O3 nanolaminate deposition. |
| 359 |